r07ds0911ej0400 rev.4.00 page 1 of 6 mar 19, 2013 preliminary datasheet rjk0346dpa 30v, 65a, 2.0m ? max. n channel power mos fet high speed power switching features ? high speed switching ? capable of 4.5 v gate drive ? low drive current ? high density mounting ? low on-resistance ? pb-free ? halogen-free outline renesas package code: pwsn0008de-a (package name: wpak(3f)) g d sss ddd 4 123 5678 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 876 5 2 1 34 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss ? 20 v drain current i d 65 a drain peak current i d(pulse) note1 260 a body-drain diode reverse drain current i dr 65 a avalanche current i ap note 2 35 a avalanche energy e ar note 2 122.5 mj channel dissipation pch note3 65 w channel to case thermal resistance ? ch-c 1.92 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds0911ej0400 rev.4.00 mar 19, 2013
rjk0346dpa preliminary r07ds0911ej0400 rev.4.00 page 2 of 6 mar 19, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? ? 0.1 ? a v gs = ? 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.2 ? 2.5 v v ds = 10 v, i d = 1 ma r ds(on) ? 1.5 2.0 m ? i d = 32.5 a, v gs = 10 v note4 static drain to source on state resistance r ds(on) ? 1.9 2.7 m ? i d = 32.5 a, v gs = 4.5 v note4 forward transfer admittance |y fs | ? 130 ? s i d = 32.5 a, v ds = 10 v note4 input capacitance ciss ? 7650 ? pf output capacitance coss ? 1500 ? pf reverse transfer capacitance crss ? 470 ? pf v ds = 10 v, v gs = 0, f = 1 mhz gate resistance rg ? 1.2 ? ? total gate charge qg ? 49 ? nc gate to source charge qgs ? 18.7 ? nc gate to drain charge qgd ? 10.5 ? nc v dd = 10 v, v gs = 4.5 v, i d = 65 a turn-on delay time t d(on) ? 15 ? ns rise time t r ? 7 ? ns turn-off delay time t d(off) ? 86.5 ? ns fall time t f ? 20 ? ns v gs = 10 v, i d = 32.5 a, v dd ? 10 v, r l = 0.31 ? , rg = 4.7 ? body?drain diode forward voltage v df ? 0.80 1.04 v i f = 65 a, v gs = 0 note4 body?drain diode reverse recovery time t rr ? 45 ? ns i f = 65 a, v gs = 0 di f / dt = 100 a/ ? s notes: 4. pulse test
rjk0346dpa preliminary r07ds0911ej0400 rev.4.00 page 3 of 6 mar 19, 2013 main characteristics drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) drain current i d (a) channel dissipation pch (w) case temperature tc (c) power vs. temperature derating gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (mv) drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) typical transfer characteristics drain to source voltage v ds (v) maximum safe operation area drain current i d (a) static drain to source on state resistance vs. drain current 100 80 60 40 20 0 246810 100 80 60 40 20 0 12 34 5 tc = 75 c 25c ?25c 80 60 40 20 0 50 100 150 200 v ds = 10 v pulse test v gs = 2.6 v pulse test 1 0.3 0.1 30 300 1 10 100 1000 3 80 60 40 20 0 4 8 12 16 20 pulse test i d = 20 a 10 a 10 3 v gs = 4.5 v 10 v 2.8 v 10 v 3.0 v 4.5 v pulse test 0.1 1 10 100 10 100 1000 1 0.1 dc operation 100 s pw = 10 ms 1 ms 10 s operation in this area is limited by r ds(on) tc = 25c 1 shot pulse 5 a static drain to source on state resistance r ds (on) (m)
rjk0346dpa preliminary r07ds0911ej0400 rev.4.00 page 4 of 6 mar 19, 2013 case temperature tc ( c) static drain to source on state resistance vs. temperature 10 8 6 4 2 ?25 0 25 50 75 100 125 150 0 i d = 5 a, 10 a, 20 a v gs = 4.5 v 10 v pulse test 5 a, 10 a, 20 a static drain to source on state resistance r ds (on) (m) source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating 200 160 120 80 40 25 50 75 100 125 150 0 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 pulse test 5 v v gs = 0, ?5v 10 v i ap = 35 a v dd = 15 v duty < 0.1 % rg 50 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 01 0 30 20 10000 3000 1000 300 100 30 10 v gs = 0 f = 1 mhz crss coss ciss gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 0 i d = 65 a v gs v ds v dd = 25 v 10 v v dd = 25 v 10 v
rjk0346dpa preliminary r07ds0911ej0400 rev.4.00 page 5 of 6 mar 19, 2013 d. u. t rg i ap monitor v ds monitor v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform pulse width pw (s) normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 1 m 10 m 100 m 1 10 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance s (t) 10 100 tc = 25c p dm pw t d = pw t ch ? c (t) = s (t) ? ch ? c ch ? c = 1.92c/w, tc = 25c vin monitor d.u.t. vin 10 v r l v ds = 10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg
rjk0346dpa preliminary r07ds0911ej0400 rev.4.00 page 6 of 6 mar 19, 2013 package dimensions 4.23typ 5.9 0.21typ 0.85max 6.1 1.27typ +0.1 -0.2 +0.1 -0.3 1.27typ 0.05max 0min 0.545typ stand-off 5.1 0.2 4.90 0.1 0.5 0.15 3.6 0.20 .5 0.15 0.42 0.08 3.92 0.22 pw s n 0008 de- a w pak ( 3f )v 0.075 g mass[t y p. ] rene s a s c od e jeita packa g e cod e previous c od e (sn plating) notice:the reverse pattern of die-pad support lead described above exists. unit: mm packa g e nam e w pak ( 3f ) ordering information orderable part number quan tity shipping container rjk0346dpa-01-j0b 2500 pcs taping note: the symbol of 2nd "-" is occasionally presented as "#".
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